PART |
Description |
Maker |
ISL9R460S3ST ISL9R460S2 ISL9R460P2 ISL9R460S3S |
4A, 600V Stealth Single Diode 4A, 600V Stealth Diode 4A 600V Stealth Diode 4A, 600V Stealth⑩ Diode 4A, 600V StealthDiode
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
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CFRM105-HF |
Halogen Free Fast Recovery Rectifiers, V-RRM=600V, V-R=600V, I-O=1A
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Comchip Technology
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MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module (DISCRETE/OPTO)
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Toshiba Semiconductor
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IRG4PC40K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
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IRF[International Rectifier]
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IRG4PC30S IRG4PC30SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
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IRF[International Rectifier]
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AM29841A/BKA AM29841A/B3A AM29843PC AM29843ALC AM2 |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package; Similar to IRGIB7B60KD with Lead Free Packaging 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; A IRGS10B60KD with Standard Packaging 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; Similar to IRG4BC15UD-L with Lead Free Packaging 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; A IRGSL6B60KD with Standard Packaging 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; Similar to IRGSL15B60KD with Lead Free Packaging 1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package; Similar to IRG4PSH71UD with Lead Free Packaging 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; A IRGS6B60KD with Standard Packaging 600V Warp2 150kHz Copack IGBT in a TO-247AC package; A IRGP50B60PD1 with Standard Packaging 600V UltraFast Copack Trench IGBT in a TO-247AD package with Ultra-Low VF Diode for Induction Heating and Soft Switching Apps; A IRGP4068D-EPBF with Standard Packaging 600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; A IRG4BC30FD-S with Standard Packaging 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; A IRG4BC15UD-L with Standard Packaging 600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package; A IRGS4B60KD1 with Standard Packaging 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AD package; Similar to IRG4PH40UD2-E with Lead Free Packaging 10位D型锁存器 600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package; Similar to IRG4RC10KD with Lead Free Packaging 9位D型锁存器 600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package; A IRGB6B60KD with Standard Packaging 9位D型锁存器
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Duracell TT electronics Semelab, Ltd. NXP Semiconductors N.V.
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IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
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IRF[International Rectifier]
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STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
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ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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IXGX64N60B3D1 IXGR48N60C3D1 IXGR48N60B3D1 IXGP48N6 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
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IXYS Corporation
|
RHRP860CC FN3964 RHRP840CC |
8A, 400V - 600V Hyperfast Dual Diodes 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB 8A/ 400V - 600V Hyperfast Dual Diodes 8A, 400V - 600V Hyperfast Dual Diodes(8A, 400V-600V 超快速二极管) 8 A, 400 V, SILICON, RECTIFIER DIODE From old datasheet system
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Intersil, Corp. Intersil Corporation
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IRFIBC30G IRFIBC30 |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A) Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=2.5A)
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IRF[International Rectifier]
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